Now this VDD distortion is on the range of 70mV which is enough to damage ‘gate oxide’. But the variation at the output of tie-hi cell is minimal and so it’s the tie-hi that protects your gate oxide and hence the entire logic cell from being
damaged.
Similar functionality and simulations can be derived for tie-low, I will leave that analysis to you….
Now the role of tie-hi reminds me of a wonderful quote from Martin Buber, “All journeys have secret destinations of which the traveler is unaware”. And so is the journey of tie-hi cell!!
To learn more about tie-hi cell, its behavior or something more about ‘unsung’ heroes of IC design, register to my courses using below discount links, which is valid till tomorrow i.e. 11th April mid-night 11:59pm IST: Till then, happy learning!!!
Library characterization and modelling – Part 1:
Static timing analysis – Part 1:
Static timing analysis – Part 2:
Physical design flow:
Circuit design and SPICE simulations – Part 1:
Circuit design and SPICE simulations – Part 2:
Custom layout:
Clock tree synthesis – Part 1:
Clock tree synthesis – Part 2:
Signal
integrity:
VLSI – Essential concepts and detailed interview
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